View MRF6S19200H_4290768.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Freescale Semiconductor Technical Data
Document Number: MRF6S19200H Rev. 0, 3/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA, Pout = 56 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 17.9 dB Drain Efficiency -- 29.5% Device Output Signal PAR -- 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 36 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19200HR3 MRF6S19200HSR3
1930 - 1990 MHz, 56 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S19200HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S19200HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) CW Operation @ TC = 25C Derate above 25C Symbol VDSS VGS VDD Tstg TC TJ CW Value - 0.5, +66 - 6.0, +10 32, +0 - 65 to +150 150 225 130 0.49 Unit Vdc Vdc Vdc C C C W W/C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 110C, 89 W CW Case Temperature 100C, 55 W CW Symbol RJC Value (2,3) 0.35 0.36 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF6S19200HR3 MRF6S19200HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 372 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1600 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.71 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- VGS(th) VGS(Q) VDS(on) 1 2 0.1 2 3 0.2 3 4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 10 Adc Adc Adc Symbol Min Typ Max Unit
2.3
185 503
-- -- --
pF pF pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, Pout = 56 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. Gps D PAR ACPR IRL 15 26 5.5 -- -- 17.9 29.5 5.9 - 36 - 14 19 -- -- - 34 -8 dB % dB dBc dB (continued)
MRF6S19200HR3 MRF6S19200HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic IMD Symmetry @ 130 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 56 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 130 W CW Average Group Delay @ Pout = 130 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 130 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Symbol IMDsym Min Typ Max Unit MHz -- 20 -- Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1600 mA, 1930 - 1990 MHz Bandwidth
VBWres GF Delay G
-- -- -- -- -- --
50 0.6 1.94 2.44 59.4 0.04
-- -- -- -- -- --
MHz dB ns dB/C
MRF6S19200HR3 MRF6S19200HSR3 RF Device Data Freescale Semiconductor 3
B1 VBIAS + R1 C1 C2 R2 C4 Z8 RF INPUT Z5 Z1 C3 Z2 Z3 Z4 Z6 Z9 DUT Z7 Z10 Z11 Z12 Z13 Z14 C13 C5 C7 C9 + C11 + C14
VSUPPLY
Z15
RF OUTPUT
VSUPPLY + C6 C8 C10 C12 + C15
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z9
0.859 0.470 0.362 0.145 0.040 0.418 0.103 0.198
x 0.084 x 0.084 x 0.244 x 1.040 x 0.257 x 1.040 x 1.203 x 0.160
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 PCB
0.547 x 1.203 Microstrip 0.119 x 0.755 Microstrip 0.222 x 0.365 Microstrip 0.225 x 0.220 Microstrip 0.192 x 0.084 Microstrip 0.843 x 0.084 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S19200HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19200HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1 C2, C9, C10 C3, C13 C4, C5, C6 C7, C8 C11, C12 C14, C15 R1 R2 Description Short Ferrite Bead 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 V Capacitors 33 pF Chip Capacitors 10 pF Chip Capacitors 10 F, 50 V Capacitors 22 F, 35 V Tantalum Capacitors 22 F, 50 V Electrolytic Capacitors 1000 , 1/4 W Chip Resistor 10 , 1/4 W Chip Resistor Part Number 2743019447 EMVY500ADA100MF55G CDR33BX104AKYS ATC100B330JT500XT ATC100B100CT500XT GRMSSDRG1H106KA88B T491X226K035AT EMVY500ADA220MF55G CRCW12061001FKEA CRCW120610R1FKEA Manufacturer Fair Rite Nippon Chemi - Con Kemet ATC ATC Murata Kemet Nippon Chemi - Con Vishay Vishay
MRF6S19200HR3 MRF6S19200HSR3 4 RF Device Data Freescale Semiconductor
B1
C7 C11 C5
R1 C4
C2 C1
R2
C9 C14
C3
CUT OUT AREA
C13
C10 C6 C15 C12
C8
MRF6S19200H/HS Rev. 2
Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout
MRF6S19200HR3 MRF6S19200HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 21 20 Gps, POWER GAIN (dB) 19 18 17 16 15 PARC 14 13 1880 -2 -2.5 2040 IRL Gps VDD = 28 Vdc, Pout = 56 W (Avg.) IDQ = 1600 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) D 31 30 29 28 -0.5 PARC (dB) -1 -1.5
0 -5 -10 -15 -20
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 56 Watts Avg.
VDD = 28 Vdc, Pout = 87 W (Avg.) IDQ = 1600 mA, Single-Carrier W-CDMA D, DRAIN EFFICIENCY (%) 20 19 Gps, POWER GAIN (dB) 18 17 16 15 14 PARC 13 12 1880 -3.5 -4 2040 IRL 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps D 38 37 36 35 -2 PARC (dB) -2.5 -3
-5 -10 -15 -20 -25
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 87 Watts Avg.
20 19 Gps, POWER GAIN (dB) 18 1600 mA 17 1200 mA 16 800 mA 15 14 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing IDQ = 2400 mA 2000 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 0 -10 -20 1200 mA -30 -40 -50 -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 IDQ = 800 mA 2400 mA 2000 mA 1600 mA VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S19200HR3 MRF6S19200HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 200 3rd Order 5th Order 7th Order VDD = 28 Vdc, IDQ = 1600 mA f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing -10 -20 -30 IM3-L IM3-U -40 IM5-U -50 -60 -70 1 10 TWO-TONE SPACING (MHz) 100 IM5-L IM7-U IM7-L VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1600 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 Ideal
Figure 8. Intermodulation Distortion Products versus Tone Spacing
45 D, DRAIN EFFICIENCY (%) 40 35 30 -2 dB = 62.72 W -3 dB = 87.05 W 25 20 15 90
-1 Actual -2 -3 -4 -5 30 -1 dB = 43.38 W
D
VDD = 28 Vdc, IDQ = 1600 mA, f = 1960 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability (CCDF) 40 50 60 70 80
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
20 -30_C Gps Gps, POWER GAIN (dB) 19 TC = -30_C 25_C D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 85_C 25_C 30 18 32 V 17.5 VDD = 24 V 17 28 V 40 18.5 IDQ = 1600 mA f = 1960 MHz
18
20
85_C 17 D 16 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1600 mA f = 1960 MHz 100 10
0 200
16.5 0 20 40 60 80 100 120 140 Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S19200HR3 MRF6S19200HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
108
MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 56 W Avg., and D = 29.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -10 -20 -30 -40 -50 -60 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 14. Single - Carrier W - CDMA Spectrum
MRF6S19200HR3 MRF6S19200HSR3 8 RF Device Data Freescale Semiconductor
Zo = 5
f = 2040 MHz
Zload
f = 1880 MHz
Zsource f = 2040 MHz f = 1880 MHz
VDD = 28 Vdc, IDQ = 1600 mA, Pout = 56 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 2.11 - j4.27 2.05 - j4.11 1.98 - j3.95 1.92 - j3.80 1.82 - j3.63 1.72 - j3.40 1.74 - j3.17 1.71 - j3.02 1.66 - j2.85 Zload W 1.99 - j0.79 1.96 - j0.64 1.92 - j0.49 1.86 - j0.34 1.78 - j0.20 1.74 + j0.01 1.77 + j0.15 1.78 + j0.29 1.75 + j0.42
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance MRF6S19200HR3 MRF6S19200HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1
2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6S19200HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S19200HSR3
MRF6S19200HR3 MRF6S19200HSR3 10
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Mar. 2008 * Initial Release of Data Sheet Description
MRF6S19200HR3 MRF6S19200HSR3 RF Device Data Freescale Semiconductor 11
How to Reach Us:
Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved.
MRF6S19200HR3 MRF6S19200HSR3
Rev. 12 0, 3/2008 Document Number: MRF6S19200H
RF Device Data Freescale Semiconductor

▲Up To Search▲

Price & Availability of MRF6S19200H

	To Download MRF6S19200H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .